MAEMO A HLAHISO A ZW SERIES WElding DIODE

Tlhaloso e Khutšoanyane:

Tekanyetso ena ea tlhahiso e sebetsa ho li-welding diode tse nang le karolelano ea pele ea 7100A ~ 18000A ho latela boholo ba khetla.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Litšupiso tse tloaelehileng tse sebelisitsoeng ke Jiangsu Yangjie Runau Semiconductor Co ha ho etsoa li-welding diode e ne e le tse latelang:

1. GB/T 4023—1997 Discrete Devices Of Semiconductor Devices and Integrated Circuits Karolo ea 2: Rectifier Diode

2. GB/T 4937—1995 Mechanical And Climatic Test Methods For Semiconductor Devices

3. JB/T 2423—1999 Power Semiconductor Devices - Mokhoa oa ho Etsa Mohlala

4. JB/T 4277—1996 Power Semiconductor Device Packaging

5. JB / T 7624-1994 Mokhoa oa Teko oa Rectifier Diode

Mohlala le boholo

1. Lebitso la mohlala: Mohlala oa diode oa welding o bua ka melao ea JB/T 2423-1999, 'me moelelo oa karolo e' ngoe le e 'ngoe ea mohlala o bontšoa ho Setšoantšo sa 1 ka tlase:

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2. Matšoao a litšoantšo le boitsebahatso ba terminal (sub).

Matshwao a kerafo le boitsebahatso ba theminale di bontshitswe ho Setšoantšo sa 2, motsu o supa theminal ea cathode.

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3. Sebopeho le litekanyo tsa ho kenya

Sebopeho sa diode e cheselitsoeng ke mofuta oa convex le disc, 'me sebopeho se nang le boholo se lokela ho fihlela litlhoko tsa Setšoantšo sa 3 le Lethathamo la 1.

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Ntho Boholo (mm)
  ZW7100 ZW12000 ZW16000/ZW18000
Cathode flange (Dmax) 61 76 102
Cathode le anode Mesa(D1) 44±0.2 57±0.2 68±0.2
Boholo bo boholo ba selikalikoe sa ceramic(D2max) 55.5 71.5 90
Kakaretso ea botenya (A) 8±1 8±1 13±2
Mount position lesoba Diameter ea lesoba: φ3.5±0.2mm, botebo ba lesoba: 1.5±0.3mm
Tlhokomeliso: litekanyo tse qaqileng le boholo ka kopo sheba

Lintlha le litšobotsi

1. Boemo ba Parameter

Letoto la reverse repetitive peak voltage (VRRM) le boletsoe ho Lethathamo la 2

Lethathamo la 2 Voltage Level

VRRM(V) 200 400
Boemo 02 04

2. Lekanyetsa litekanyetso

Litekanyetso tsa moeli li tla lumellana le Lethathamo la 3 'me li sebetsa ho mefuta eohle ea mocheso oa ts'ebetso.

Lethathamo la 3 Moeli oa Boleng

Moeli oa Boleng

Letšoao

Yuniti

Boleng

ZW7100 ZW12000 ZW16000 ZW18000

Mocheso oa mocheso

Tcase

-40 - 85

Mocheso o lekanang oa mateano (boholo)

T(vj)

170

Mocheso oa polokelo

Tstg

-40 ~ 170

Molumo o iphetang oa peak reverse voltage (max)

VRRM

V

200/400

200/400

200/400

200/400

Fetola matla a phahameng a sa ipheteng (max

VRSM

V

300/450

300/450

300/450

300/450

Kakaretso ea ho fetela pele (boholo)

IF (AV)

A

7100

12000

16000

18000

Ho fetela pele (ho sa iphetang) hona joale (max)

IFSM

A

55000

85000

120000

135000

I²t (max)

Ke²t

kA²s

15100

36100

72000

91000

Matla a phahamisang

F

kN

22-24

30-35

45-50

52-57

3. Litšobotsi tsa boitšoaro

Tafole 4 Maemo a phahameng a sebopeho

Semelo le boemo Letšoao Yuniti

Boleng

ZW7100

ZW12000

ZW16000

ZW18000

Fetisetsa pele peak voltageIFM=5000A, Tj=25℃ VFM V

1.1

1.08

1.06

1.05

Khutlisetsa morao ka makhetlo a mangataTj=25℃, Tj=170℃ IRRM mA

50

60

60

80

Mocheso oa ho hanyetsa Junction-to-case Rjc ℃/W

0.01

0.006

0.004

0.004

Tlhokomeliso: bakeng sa tlhokahalo e khethehileng ka kopo ikopanye

Thetjheseletsa diodee hlahisoang ke Jiangsu Yangjie Runau Semiconductor e sebelisoa haholo mochining oa welding oa ho hanyetsa, mochini o mahareng le o phahameng oa maqhubu ho fihla ho 2000Hz kapa ka holimo.E na le matla a phahameng a holimo a tlase a phahameng, ho hanyetsa mocheso o tlase haholo, theknoloji ea tlhahiso ea bonono, bokhoni bo botle ba ho kenya sebaka le ts'ebetso e tsitsitseng bakeng sa basebelisi ba lefats'e, diode ea welding e tsoang Jiangsu Yangjie Runau Semiconductor ke e 'ngoe ea lisebelisoa tse tšepahalang ka ho fetisisa tsa matla a China. lihlahisoa tsa semiconductor.


  • E fetileng:
  • E 'ngoe:

  • Ngola molaetsa wa hao mona mme o re romele wona