Tobetsa-Pack IGBT

Tlhaloso e Khutšoanyane:


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Tobetsa-pakete IGBT (IEGT)

MOFUTA VDRM
V
VRRM
V
IT(AV)@80℃
A
ITGQM@CS
A / µF
ITSM@10ms
kA
VTM
V
VTO
V
rT
TVJM
Rthjc
℃/W
CSG07E1400 1400 100 250 700 2 4 ≤2.2 ≤1.20 ≤0.50 125 0.075
CSG07E1700 1700 16 240 700 1.5 4 ≤2.5 ≤1.20 ≤0.50 125 0.075
CSG15F2500 2500 17 570 1500 3 10 ≤2.8 ≤1.50 ≤0.90 125 0.027
CSG20H2500 2500 17 830 2000 6 16 ≤2.8 ≤1.66 ≤0.57 125 0.017
CSG25H2500 2500 16 867 2500 6 18 ≤3.1 ≤1.66 ≤0.57 125 0.017
CSG30J2500 2500 17 1350 3000 5 30 ≤2.5 ≤1.50 ≤0.33 125 0.012
CSG10F2500 2500 15 830 1000 2 12 ≤2.5 ≤1.66 ≤0.57 125 0.017
CSG06D4500 4500 17 210 600 1 3.1 ≤4.0 ≤1.90 ≤0.50 125 0.05
Setšoantšo sa CSG10F4500 4500 16 320 1000 1 7 ≤3.5 1.9 ≤0.35 125 0.03
CSG20H4500 4500 16 745 2000 2 16 ≤3.2 ≤1.8 ≤0.85 125 0.017
CSG30J4500 4500 16 870 3000 6 16 ≤4.0 ≤2.2 ≤0.60 125 0.012
Setšoantšo sa CSG40L4500 4500 16 1180 4000 3 20 ≤4.0 ≤2.1 ≤0.58 125 0.011

 Hlokomela:D- le dkarolo ea iode, A-ntle le karolo ea diode

Ka mokhoa o ts'oanang, li-module tsa IGBT tsa solder li ile tsa sebelisoa ka har'a sesebelisoa sa switjha sa sistimi ea phetisetso ea DC.Sephutheloana sa module ke ho senya mocheso ka lehlakoreng le le leng.Matla a sesebelisoa a lekanyelitsoe ebile ha a tšoanelehe ho hokahanngoa ka letoto, bophelo bo futsanehileng moeeng oa letsoai, ho sisinyeha ho fokolang ho thibela ho tsosoa kapa mokhathala oa mocheso.

Sesebelisoa sa IGBT sa mofuta o mocha oa khatiso o nang le matla a phahameng a matla a matla a matla ha se rarolle feela ka botlalo mathata a sekheo sa tšebetso ea solder, mokhathala o futhumatsang oa thepa ea solder le ts'ebetso e tlase ea ho felloa ke mocheso ka lehlakoreng le le leng empa hape e felisa ho hanyetsa mocheso lipakeng tsa likarolo tse fapaneng, fokotsa boholo le boima.Le ho ntlafatsa haholo ts'ebetso ea ts'ebetso le ts'epahalo ea sesebelisoa sa IGBT.E loketse hantle ho khotsofatsa litlhoko tsa matla a holimo, a matla a phahameng, a ts'epahalo e phahameng ea sistimi e feto-fetohang ea DC.

Ho hlokahala hore ho nkeloe sebaka sa mofuta oa solder ka khatiso-pack IGBT.

Ho tloha ka 2010, Runau Electronics e ile ea qaqisoa ho hlahisa mochine o mocha oa khatiso oa IGBT oa mofuta o mocha le ho atleha tlhahiso ea 2013. Ts'ebetso e ile ea netefatsoa ke mangolo a naha 'me katleho e sehiloeng e phethiloe.

Hona joale re ka etsa le ho fana ka letoto la li-press-pack IGBT tsa IC ho tloha 600A ho isa ho 3000A le VCES range ho 1700V ho 6500V.Tebello e ntle ea IGBT ea mochini oa khatiso e entsoeng China hore e sebelisoe China flexible DC transmission system e lebelletsoe haholo mme e tla fetoha lejoe le leng la boemo ba lefats'e la indasteri ea motlakase ea China kamora terene e lebelo e phahameng.

 

Kenyelletso e Khutšoanyane ea Mokhoa o Tloaelehileng:

1. Mokhoa: Tobetsa-pack IGBT CSG07E1700

Litšobotsi tsa motlakase ka mor'a ho paka le ho hatella
● Kgutlela moraobapilekopantswediode ea ho hlaphoheloa kapelephethela

● Paramethara:

Boleng bo lekantsoeng (25℃)

a.Mokelli oa Emitter Voltage: VGES=1700 (V)

b.Gate Emitter Voltage: VCES = ± 20 (V)

c.'Mokelli oa Hona Joale: IC=800(A)ICP=1600(A)

d.Phokotso ea Matla a Bokelli: PC=4440(W)

e.Mocheso oa ho sebetsa oa Junction: Tj=-20~125℃

f.Mocheso oa polokelo: Tstg = -40 ~ 125 ℃

Ela hloko: sesebelisoa se tla senyeha haeba se feta boleng bo lekantsoeng

MotlakaseCbohlasoa, TC=125℃,Rth (ho hanyetsa mocheso oamateano honyeoeha e kenyelelitsoe

a.Keke ea Leakage Hajoale: IGES=±5(μA)

b.Mobokelli Emitter Thibela Current ICES=250(mA)

c.Moqokelli Emitter Saturation Voltage: VCE(sat)=6(V)

d.Motlakase oa Motlakase oa Gate Emitter: VGE(th)=10(V)

e.Bulela nako: Ton=2.5μs

f.Nako ea ho tima: Toff=3μs

 

2. Mokhoa: Tobetsa-pack IGBT CSG10F2500

Litšobotsi tsa motlakase ka mor'a ho paka le ho hatella
● Kgutlela moraobapilekopantswediode ea ho hlaphoheloa kapelephethela

● Paramethara:

Boleng bo lekantsoeng (25℃)

a.Mokelli oa Emitter Voltage: VGES=2500 (V)

b.Gate Emitter Voltage: VCES = ± 20 (V)

c.'Mokelli oa Hona Joale: IC=600(A)ICP=2000(A)

d.Phokotso ea Matla a Bokelli: PC=4800(W)

e.Mocheso oa ho sebetsa oa Junction: Tj=-40~125℃

f.Mocheso oa polokelo: Tstg = -40 ~ 125 ℃

Ela hloko: sesebelisoa se tla senyeha haeba se feta boleng bo lekantsoeng

MotlakaseCbohlasoa, TC=125℃,Rth (ho hanyetsa mocheso oamateano honyeoeha e kenyelelitsoe

a.Keke ea Leakage ea Hona Joale: IGES=±15(μA)

b.Mobokelli Emitter Blocking Current ICES=25(mA)

c.Moqokelli Emitter Saturation Voltage: VCE(sat)=3.2 (V)

d.Gate Emitter Threshold Voltage: VGE(th)=6.3(V)

e.Bulela nako: Ton=3.2μs

f.Nako ea ho tima: Toff=9.8μs

g.Matla a Diode Forward: VF = 3.2 V

h.Nako ea ho Khutlisa Diode: Trr=1.0 μs

 

3. Mokhoa: Tobetsa-pakete IGBT CSG10F4500

Litšobotsi tsa motlakase ka mor'a ho paka le ho hatella
● Kgutlela moraobapilekopantswediode ea ho hlaphoheloa kapelephethela

● Paramethara:

Boleng bo lekantsoeng (25℃)

a.Mokelli oa Emitter Voltage: VGES=4500 (V)

b.Gate Emitter Voltage: VCES = ± 20 (V)

c.'Mokelli oa Hona Joale: IC=600(A)ICP=2000(A)

d.Phokotso ea Matla a Bokelli: PC=7700(W)

e.Mocheso oa ho sebetsa oa Junction: Tj=-40~125℃

f.Mocheso oa polokelo: Tstg = -40 ~ 125 ℃

Ela hloko: sesebelisoa se tla senyeha haeba se feta boleng bo lekantsoeng

MotlakaseCbohlasoa, TC=125℃,Rth (ho hanyetsa mocheso oamateano honyeoeha e kenyelelitsoe

a.Keke ea Leakage ea Hona Joale: IGES=±15(μA)

b.Mobokelli Emitter Thibela Current ICES=50(mA)

c.Moqokelli Emitter Saturation Voltage: VCE(sat)=3.9 (V)

d.Gate Emitter Threshold Voltage: VGE(th)=5.2 (V)

e.Bulela nako: Ton=5.5μs

f.Nako ea ho tima: Toff = 5.5μs

g.Matla a Diode Forward: VF=3.8 V

h.Nako ea ho Khutlisa Diode: Trr=2.0 μs

Hlokomela:Press-pack IGBT e na le molemo ho ts'epahalo ea nako e telele ea mochini o phahameng, ho hanyetsa ts'enyo le litšoaneleho tsa sebopeho sa mochini oa khatiso, e bonolo ho sebelisoa ka sesebelisoa sa letoto, mme ha e bapisoa le GTO thyristor ea setso, IGBT ke mokhoa oa ho khanna motlakase. .Ka hona, ho bonolo ho sebetsa, ho bolokehile ebile ho na le mefuta e mengata ea ts'ebetso.


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