Litšupiso tse tloaelehileng tse sebelisitsoeng ke Jiangsu Yangjie Runau Semiconductor Co ha ho etsoa li-welding diode e ne e le tse latelang:
1. GB/T 4023—1997 Discrete Devices Of Semiconductor Devices and Integrated Circuits Karolo ea 2: Rectifier Diode
2. GB/T 4937—1995 Mechanical And Climatic Test Methods For Semiconductor Devices
3. JB/T 2423—1999 Power Semiconductor Devices – Modeling Method
4. JB/T 4277—1996 Power Semiconductor Device Packaging
5. JB / T 7624-1994 Mokhoa oa Teko oa Rectifier Diode
Mohlala le boholo
1. Lebitso la mohlala: Mohlala oa diode oa welding o bua ka melao ea JB/T 2423-1999, 'me moelelo oa karolo e' ngoe le e 'ngoe ea mohlala o bontšoa ho Setšoantšo sa 1 ka tlase:
2. Matšoao a litšoantšo le boitsebahatso ba terminal (sub).
Matshwao a kerafo le boitsebahatso ba theminale di bontshitswe ho Setšoantšo sa 2, motsu o supa theminal ea cathode.
3. Sebopeho le litekanyo tsa ho kenya
Sebopeho sa diode e cheselitsoeng ke mofuta oa convex le disc, 'me sebopeho se nang le boholo se lokela ho fihlela litlhoko tsa Setšoantšo sa 3 le Lethathamo la 1.
| Ntho | Boholo (mm) | ||
| ZW7100 | ZW12000 | ZW16000/ZW18000 | |
| Cathode flange (Dmax) | 61 | 76 | 102 |
| Cathode le anode Mesa(D1) | 44±0.2 | 57±0.2 | 68±0.2 |
| Boholo bo boholo ba selikalikoe sa ceramic (D2max) | 55.5 | 71.5 | 90 |
| Kakaretso ea botenya (A) | 8±1 | 8±1 | 13±2 |
| Mount position lesoba | Diameter ea lesoba: φ3.5±0.2mm, botebo ba lesoba: 1.5±0.3mm | ||
Lintlha le litšobotsi
1. Boemo ba Parameter
Letoto la reverse repetitive peak voltage (VRRM) le boletsoe ho Lethathamo la 2
Lethathamo la 2 Voltage Level
| VRRM(V) | 200 | 400 |
| Boemo | 02 | 04 |
2. Lekanyetsa litekanyetso
Litekanyetso tsa moeli li tla lumellana le Lethathamo la 3 'me li sebetsa ho mefuta eohle ea mocheso oa ts'ebetso.
Lethathamo la 3 Moeli oa Boleng
| Moeli oa Boleng | Letšoao | Yuniti | Boleng | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Mocheso oa mocheso | Tcase | ℃ | -40 - 85 | |||
| Mocheso o lekanang oa mateano (boholo) | T(vj) | ℃ | 170 | |||
| Mocheso oa polokelo | Tstg | ℃ | -40 ~ 170 | |||
| Molumo o iphetang oa peak reverse voltage (max) | VRRM | V | 200/400 | 200/400 | 200/400 | 200/400 |
| Fetola matla a phahameng a sa ipheteng (max | VRSM | V | 300/450 | 300/450 | 300/450 | 300/450 |
| Kakaretso ea ho fetela pele (boholo) | IF (AV) | A | 7100 | 12000 | 16000 | 18000 |
| Ho fetela pele (ho sa iphetang) hona joale (max) | IFSM | A | 55000 | 85000 | 120000 | 135000 |
| I²t (max) | Ke²t | kA²s | 15100 | 36100 | 72000 | 91000 |
| Matla a phahamisang | F | kN | 22-24 | 30-35 | 45-50 | 52-57 |
3. Litšobotsi tsa boitšoaro
Tafole 4 Maemo a phahameng a sebopeho
| Semelo le boemo | Letšoao | Yuniti | Boleng | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Fetela peak voltageIFM=5000A, Tj=25℃ | VFM | V | 1.1 | 1.08 | 1.06 | 1.05 |
| Khutlisetsa morao-rao sehlohlolong se iphetang Tj=25℃, Tj=170℃ | IRRM | mA | 50 | 60 | 60 | 80 |
| Mocheso oa ho hanyetsa Junction-to-case | Rjc | ℃/W | 0.01 | 0.006 | 0.004 | 0.004 |
| Tlhokomeliso: bakeng sa tlhokahalo e khethehileng ka kopo ikopanye | ||||||
Thetjheseletsa diodee hlahisoang ke Jiangsu Yangjie Runau Semiconductor e sebelisoa haholo mochining oa welding oa ho hanyetsa, mochini o mahareng le o phahameng oa maqhubu ho fihla ho 2000Hz kapa ka holimo.E na le matla a phahameng a holimo a tlase a phahameng, ho hanyetsa mocheso o tlase haholo, theknoloji ea tlhahiso ea bonono, bokhoni bo botle ba ho kenya sebaka le ts'ebetso e tsitsitseng bakeng sa basebelisi ba lefats'e, diode ea welding e tsoang Jiangsu Yangjie Runau Semiconductor ke e 'ngoe ea lisebelisoa tse tšepahalang ka ho fetisisa tsa matla a China. lihlahisoa tsa semiconductor.
Nako ea poso: Jun-14-2023