Tlhaloso
Tekanyetso ea tlhahiso ea GE le theknoloji ea ts'ebetso e ile ea hlahisoa mme ea sebelisoa ke RUNAU Electronics ho tloha ka bo-1980.Boemo bo felletseng ba tlhahiso le tlhahlobo bo ne bo lumellana ka botlalo le tlhoko ea 'maraka oa USA.E le pula-maliboho ea ho etsa lihlahisoa tsa thyristor Chaena, RUNAU Electronics e ne e fane ka tsebo ea lisebelisoa tsa elektronike tsa matla a mmuso ho USA, linaha tsa Europe le basebelisi ba lefats'e.E hloahloa haholo ebile e hlahlobiloe ke bareki 'me likhau tse kholo le boleng li etselitsoe balekane.
Selelekela:
1. Chipi
The thyristor chip e entsoeng ke RUNAU Electronics ke theknoloji ea alloying ea sintered e sebelisitsoeng.Silicon le molybdenum wafer li ile tsa siloa bakeng sa ho kopanngoa ke aluminium e hloekileng (99.999%) tlas'a vacuum e phahameng le tikoloho ea mocheso o phahameng.Tsamaiso ea litšobotsi tsa sintering ke ntlha ea bohlokoa ho ama boleng ba thyristor.Tsebo ea RUNAU Electronics ho phaella ho laola botebo ba motsoako oa alloy, flat flatness, alloy cavity hammoho le tsebo e feletseng ea ho hasana, mokhoa oa selikalikoe oa selikalikoe, mohaho o khethehileng oa heke.Hape ho ile ha sebelisoa ts'ebetso e khethehileng ho fokotsa bophelo ba mochine oa mochine, e le hore lebelo la ho kopanya mochine oa ka hare le potlakile haholo, tefiso ea ho khutlisa mochine e fokotsehile, 'me lebelo la ho fetola le ntlafatsoa ka lebaka leo.Litekanyo tse joalo li ile tsa sebelisoa ho ntlafatsa litšobotsi tse fetohang ka potlako, litšoaneleho tsa boemo bo holimo, le thepa ea hona joale ea surge.Ts'ebetso le ts'ebetso ea ts'ebetso ea thyristor e ka tšeptjoa ebile e sebetsa hantle.
2. Encapsulation
Ka ho laola ka thata ho bata le ho ts'oana ha molybdenum wafer le sephutheloana sa kantle, chip le molybdenum wafer li tla kopanngoa le sephutheloana sa kantle ka thata le ka botlalo.E joalo e tla ntlafatsa khanyetso ea surge ea hona joale le e phahameng ea potoloho e khuts'oane ea hona joale.'Me tekanyo ea thekenoloji ea elektronike ea mouoane e ile ea sebelisoa ho theha filimi e teteaneng ea aluminium holim'a silicon oafer surface,' me lera la ruthenium le koahetsoeng holim'a molybdenum le tla matlafatsa ho hanyetsa mokhathala oa mocheso haholo, nako ea bophelo ea mosebetsi oa ho itima lijo thyristor e tla eketseha haholo.
Tlhaloso ea tekheniki
Paramethara:
MOFUTA | IT(AV) A | TC ℃ | VDRM/VRRM V | ITSM @TVJIM&10ms A | I2t A2s | VTM @IT&TJ=25℃ V / A | tq μs | Tjm ℃ | Rjc ℃/W | Rcs ℃/W | F KN | m Kg | KHOUTU | |
Voltage ho fihla ho 1600V | ||||||||||||||
YC476 | 380 | 55 | 1200 ~ 1600 | 5320 | 1.4x105 | 2.90 | 1500 | 30 | 125 | 0.054 | 0.010 | 10 | 0.08 | T2A |
YC448 | 700 | 55 | 1200 ~ 1600 | 8400 | 3.5x105 | 2.90 | 2000 | 35 | 125 | 0.039 | 0.008 | 15 | 0.26 | T5C |
Voltage ho fihla ho 2000V | ||||||||||||||
YC712 | 1000 | 55 | 1600-2000 | 14000 | 9.8x105 | 2.20 | 3000 | 55 | 125 | 0.022 | 0.005 | 25 | 0.46 | T8C |
YC770 | 2619 | 55 | 1600-2000 | 31400 | 4.9x106 | 1.55 | 2000 | 70 | 125 | 0.011 | 0.003 | 35 | 1.5 | T13D |